High photoexcited carrier multiplication by charged InAs dots in AlAs∕GaAs∕AlAs resonant tunneling diode

High photo-excited carrier multiplication by charged InAs dots in AlAs/GaAs/AlAs resonant tunneling diode

Abstract We present an approach for the highly sensitive photon detection based on the quantum dots (QDs) operating at temperature of 77K. The detection structure is based on an AlAs/GaAs/AlAs double barrier resonant tunneling diode combined with a layer of self-assembled InAs QDs (QDRTD). A photon rate of 115 photons per second had induced 10nA photocurrent in this structure, corresponding to ...

Tunneling carrier escape from InAs self-assembled quantum dots

Resonant tunneling diode pdf

Carrier multiplication in InAs nanocrystal quantum dots with an onset defined by the energy conservation limit.

Carrier multiplication (CM) is a process in which absorption of a single photon produces not just one but multiple electron-hole pairs (excitons). This effect is a potential enabler of next-generation, high-efficiency photovoltaic and photocatalytic systems. On the basis of energy conservation, the minimal photon energy required to activate CM is two energy gaps (2Eg). Here, we analyze CM onset...

Resonant tunneling in graphene pseudomagnetic quantum dots.

Realistic relaxed configurations of triaxially strained graphene quantum dots are obtained from unbiased atomistic mechanical simulations. The local electronic structure and quantum transport characteristics of y-junctions based on such dots are studied, revealing that the quasi-uniform pseudomagnetic field induced by strain restricts transport to Landau level- and edge state-assisted resonant ...